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Layered transition metal dichalcogenides display a wide range of attractivephysical and chemical properties and are potentially important for variousdevice applications. Here we report the electronic transport and deviceproperties of monolayer molybdenum disulphide (MoS2) grown by chemical vapourdeposition (CVD). We show that these devices have the potential to suppressshort channel effects and have high critical breakdown electric field. However,our study reveals that the electronic properties of these devices are atpresent, severely limited by the presence of a significant amount of band tailtrapping states. Through capacitance and ac conductance measurements, wesystematically quantify the density-of-states and response time of thesestates. Due to the large amount of trapped charges, the measured effectivemobility also leads to a large underestimation of the true band mobility andthe potential of the material. Continual engineering efforts on improving thesample quality are needed for its potential applications.

Electronic transport and device prospects of monolayer molybdenum disulphide grown by chemical vapour deposition