English (United Kingdom)

https://curated-unify.zendy.io/wp-json/zendy-region/v1/featured_content/oa?rat=en

https://curated-unify.zendy.io/wp-json/zendy-region/v1/highlighted_journal/

Global: Zendy Plus annual

Presents the access of premium content as premium feature

Premium Content

Presents the keyphrase highlighting as premium feature

Keyphrase Highlighting

Presents the summarisation as premium feature

Summarisation

Insights

Presents the pdf analysis as premium feature

PDF Analysis

Presents the zaia usage as premium feature

ZAIA

Global: Zendy Tools annual

Global: Zendy Free Plan

Global: Zendy Tools monthly

Global: Zendy Plus monthly

Kondo insulators (KIs) are strongly correlated materials in which theinteractions between 4f and conduction electrons lead to a hybridization gapopening at low temperature 1-2. SmB6 is a typical KI, but its resistivity doesnot diverge at low temperatures, which was attributed to some in-gap states3-10. However after several decades of research, the nature and origin of thein-gap states remain unclear. Recent band calculation and transportmeasurements suggest that the in-gap states could actually be ascribed totopological surface states. SmB6 thus might be the first realization oftopological Kondo insulator (TKI) 13, the strongly correlated version oftopological insulator (TI) 11,12. Here by performing angle-resolvedphotoemission spectroscopy (ARPES), we directly observed several dispersivestates within the hybridization gap of SmB6, which cross the Fermi level andshow negligible kz dependence, indicative of their surface origin. Furthermore,the circular dichroism (CD) ARPES results of the in-gap states suggest thechirality of orbital momentum, and temperature dependent measurements haveshown that the in-gap states vanish simultaneously with the hybridization gaparound 150 K. These strongly suggest their possible topological origin.

Observation of in-gap surface states in the Kondo insulator SmB6 by photoemission