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The chemical stability of graphene and other free-standing two-dimensionalcrystals means that they can be stacked in different combinations to produce anew class of functional materials, designed for specific device applications.Here we report resonant tunnelling of Dirac fermions through a boron nitridebarrier, a few atomic layers thick, sandwiched between two graphene electrodes.The resonant peak in the device characteristics occurs when the electronicspectra of the two electrodes are aligned. The resulting negative differentialconductance persists up to room temperature and is gate voltage-tuneable due tographene's unique Dirac-like spectrum. Whereas conventional resonant tunnellingdevices comprising a quantum well sandwiched between two tunnel barriers aretens of nanometres thick, the tunnelling carriers in our devices cross only afew atomic layers, offering the prospect of ultra-fast transit times. Thisfeature, combined with the multi-valued form of the device characteristics, haspotential for applications in high-frequency and logic devices.

Resonant tunnelling and negative differential conductance in graphene transistors