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Redox-based nanoionic resistive memory cells (ReRAMs) are one of the mostpromising emerging nano-devices for future information technology withapplications for memory, logic and neuromorphic computing. Recently, theserendipitous discovery of the link between ReRAMs and memristors andmemristive devices has further intensified the research in this field. Here weshow on both a theoretical and an experimental level that nanoionic-typememristive elements are inherently controlled by non-equilibrium statesresulting in a nanobattery. As a result the memristor theory must be extendedto fit the observed non zerocrossing I-V characteristics. The initialelectromotive force of the nanobattery depends on the chemistry and thetransport properties of the materials system but can also be introduced duringReRAM cell operations. The emf has a strong impact on the dynamic behaviour ofnanoscale memories, and thus, its control is one of the key factors for futuredevice development and accurate modelling.

Nanobatteries in redox-based resistive switches require extension of memristor theory