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Although the mechanism of superconductivity in the cuprates remains elusive,it is generally agreed that at the heart of the problem is the physics of dopedMott insulators. The cuprate parent compound has one unpaired electron per Cusite, and is predicted by band theory to be a half-filled metal. The strongonsite Coulomb repulsion, however, prohibits electron hopping betweenneighboring sites and leads to a Mott insulator ground state withantiferromagnetic (AF) ordering. Charge carriers doped into the CuO2 planedestroy the insulating phase and superconductivity emerges as the carrierdensity is sufficiently high. The natural starting point for tackling high Tcsuperconductivity is to elucidate the electronic structure of the parent Mottinsulator and the behavior of a single doped charge. Here we use a scanningtunneling microscope to investigate the atomic scale electronic structure ofthe Ca2CuO2Cl2 parent Mott insulator of the cuprates. The full electronicspectrum across the Mott-Hubbard gap is uncovered for the first time, whichreveals the particle-hole symmetric and spatially uniform Hubbard bands. Asingle electron donated by surface defect is found to create a broad in-gapelectronic state that is strongly localized in space with spatialcharacteristics intimately related to the AF spin background. The unprecedentedreal space electronic structure of the parent cuprate sheds important new lighton the origion of high Tc superconductivity from the doped Mott insulatorperspective.

Visualizing the atomic scale electronic structure of the Ca2CuO2Cl2 Mott insulator