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A two-dimensional honeycomb lattice harbors a pair of inequivalent valleys inthe k-space electronic structure, in the vicinities of the vertices of ahexagonal Brillouin zone, K}$_{\pm}$. It is particularly appealing to exploitthis emergent degree of freedom of charge carriers, in what is termed"valleytronics", if charge carrier imbalance between the valleys can beachieved. The physics of valley polarization will make possible electronicdevices such as valley filter and valley valve, and optoelectronic Halldevices, all very promising for next-generation electronic and optoelectronicapplications. The key challenge lies with achieving valley imbalance, of whicha convincing demonstration in a two-dimensional honeycomb structure remainsevasive, while there are only a handful of examples for other materials. Weshow here, using first principles calculations, that monolayer MoS_2, a noveltwo-dimensional semiconductor with a 1.8 eV direct band gap, is an idealmaterial for valleytronics by valley- selective circular dichroism, withensuing valley polarization and valley Hall effect.

MoS_2 as an ideal material for valleytronics: valley-selective circular dichroism and valley Hall effect