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The ability to engineer the thermal conductivity of materials allows us tocontrol the flow of heat and derive novel functionalities such as thermalrectification, thermal switching, and thermal cloaking. While this could beachieved by making use of composites and metamaterials at bulk scales,engineering the thermal conductivity at micro- and nano-scale dimensions isconsiderably more challenging. In this work we show that the local thermalconductivity along a single Si nanowire can be tuned to a desired value(between crystalline and amorphous limits) with high spatial resolution throughselective helium ion irradiation with a well-controlled dose. The underlyingmechanism is understood through molecular dynamics simulations and quantitativephonon-defect scattering rate analysis, where the behavior of thermalconductivity with dose is attributed to the accumulation and agglomeration ofscattering centers at lower doses. Beyond a threshold dose, acrystalline-amorphous transition was observed.

Engineering the thermal conductivity along an individual silicon nanowire by selective helium ion irradiation