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Understanding excited carrier dynamics in semiconductors is crucial for thedevelopment of photovoltaics and efficient photonic devices. However,overlapping spectral features in optical/NIR pump-probe spectroscopy oftenrender assignments of separate electron and hole carrier dynamics ambiguous.Here, ultrafast electron and hole dynamics in germanium nanocrystalline thinfilms are directly and simultaneously observed by attosecond transientabsorption spectroscopy (ATAS) in the extreme ultraviolet at the germaniumM_{4,5}-edge (~30 eV). We decompose the ATAS spectra into contributions ofelectronic state blocking and photo-induced band shifts at a carrier density of8*10^{20}cm^{-3}. Separate electron and hole relaxation times are observed as afunction of hot carrier energies. A first order electron and hole decay of ~1ps suggests a Shockley-Read-Hall recombination mechanism. The simultaneousobservation of electrons and holes with ATAS paves the way for investigatingfew to sub-femtosecond dynamics of both holes and electrons in complexsemiconductor materials and across junctions.

Direct and Simultaneous Observation of Ultrafast Electron and Hole Dynamics in Germanium