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Semiconductor spintronics is an alternative to conventional electronics that offers devices with high performance, low power and multiple functionality. Although a large number of devices with mesoscopic dimensions have been successfully demonstrated at low temperatures for decades, room-temperature operation still needs to go further. Here we study spin injection in single-crystal gallium nitride nanowires and report robust spin accumulation at room temperature with enhanced spin injection polarization of 9%. A large Overhauser coupling between the electron spin accumulation and the lattice nuclei is observed. Finally, our single-crystal gallium nitride samples have a trigonal cross-section defined by the (001), (    ) and (    ) planes. Using the Hanle effect, we show that the spin accumulation is significantly different for injection across the (001) and (    ) (or (    )) planes. This provides a technique for increasing room temperature spin injection in mesoscopic systems.

Large spin accumulation and crystallographic dependence of spin transport in single crystal gallium nitride nanowires