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The topological materials have attracted much attention recently. Whilethree-dimensional topological insulators are becoming abundant, two-dimensionaltopological insulators remain rare, particularly in natural materials. ZrTe5has host a long-standing puzzle on its anomalous transport properties; itsunderlying origin remains elusive. Lately, ZrTe5 has ignited renewed interestbecause it is predicted that single-layer ZrTe5 is a two-dimensionaltopological insulator and there is possibly a topological phase transition inbulk ZrTe5. However, the topological nature of ZrTe5 is under debate as someexperiments point to its being a three-dimensional or quasi-two-dimensionalDirac semimetal. Here we report high-resolution laser-based angle-resolvedphotoemission measurements on ZrTe5. The electronic property of ZrTe5 isdominated by two branches of nearly-linear-dispersion bands at the Brillouinzone center. These two bands are separated by an energy gap that decreases withdecreasing temperature but persists down to the lowest temperature we measured(~2 K). The overall electronic structure exhibits a dramatic temperaturedependence; it evolves from a p-type semimetal with a hole-like Fermi pocket athigh temperature, to a semiconductor around ~135 K where its resistivityexhibits a peak, to an n-type semimetal with an electron-like Fermi pocket atlow temperature. These results indicate a clear electronic evidence of thetemperature-induced Lifshitz transition in ZrTe5. They provide a naturalunderstanding on the underlying origin of the resistivity anomaly at ~135 K andits associated reversal of the charge carrier type. Our observations alsoprovide key information on deciphering the topological nature of ZrTe5 andpossible temperature-induced topological phase transition.

Electronic Evidence of Temperature-Induced Lifshitz Transition and Topological Nature in ZrTe5