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Semiconductor compounds are widely used for water splitting applications,where photo-generated electron-hole pairs are exploited to induce catalysis.Recently, powders of a metallic oxide (Sr$_{1-x}$NbO$_3$, 0.03 < x < 0.20) haveshown competitive photocatalytic efficiency, opening up the material spaceavailable for finding optimizing performance in water-splitting applications.The origin of the visible light absorption in these powders was reported to bedue to an interband transition and the charge carrier separation was proposedto be due to the high carrier mobility of this material. In the current work wehave prepared epitaxial thin films of Sr$_{0.94}$NbO$_{3+{\delta}}$ and foundthat the bandgap of this material is ~4.1 eV, which is very large. Surprisinglythe carrier density of the conducting phase reaches 10$^{22}$ cm$^{-3}$, whichis only one order smaller than that of elemental metals and the carriermobility is only 2.47 cm$^2$/(V$\cdot$s). Contrary to earlier reports, thevisible light absorption at 1.8 eV (~688 nm) is due to the bulk plasmonresonance, arising from the large carrier density, instead of an interbandtransition. Excitation of the plasmonic resonance results in a multifoldenhancement of the lifetime of charge carriers. Thus we propose that the hotcharge carriers generated from decay of plasmons produced by optical absorptionis responsible for the water splitting efficiency of this material undervisible light irradiation.

The Nature of Electron Transport and visible light absorption in Strontium Niobate -- A Plasmonic Water Splitter