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Charge carriers in the quantum Hall regime propagate via one-dimensionalconducting channels that form along the edges of a two-dimensional electrongas. Controlling their transmission through a gate-tunable constriction, alsocalled quantum point contact (QPC), is fundamental for many coherent transportexperiments. However, in graphene, tailoring a QPC with electrostatic gatesremains challenging due to the formation of p-n junctions below gate electrodesalong which electron and hole edge channels co-propagate and mix,short-circuiting the constriction. Here we show that this electron-hole mixingis drastically reduced in high mobility boron-nitride/graphene/boron-nitridevan-der-Waals heterostructures thanks to the full degeneracy lifting of theLandau levels, enabling QPC operation with full channel pinch-off. Wedemonstrate gate-tunable selective transmission of quantum Hall edge channelsthrough the QPC, both in the integer and the fractional quantum Hall regimes.This gate-control of edge channel propagation in graphene van-der-Waalsheterostructures opens the door to quantum Hall interferometry and electronquantum optics experiments in the integer and fractional quantum Hall regimesof graphene.

Tunable transmission of quantum Hall edge channels with full degeneracy lifting in split-gated graphene devices