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There is an increasing interest in the electronic properties of few layergraphene as it offers a platform to study electronic interactions because thedispersion of bands can be tuned with number and stacking of layers incombination with electric field. However, electronic interaction becomesimportant only in very clean devices and so far the trilayer grapheneexperiments are understood within non-interacting electron picture. Here, wereport evidence of strong electronic interactions and quantum Hallferromagnetism (QHF) seen in ABA trilayer graphene (ABA-TLG). Due to highmobility $\sim$500,000 cm$^2$V$^{-1}$s$^{-1}$ in our device compared toprevious studies, we find all symmetry broken states and that Landau Level (LL)gaps are enhanced by interactions; an aspect explained by our self-consistentHartree-Fock (H-F) calculations. Moreover, we observe hysteresis as a functionof filling factor ($\nu$) and spikes in the longitudinal resistance which,together, signal the formation of QHF states at low magnetic field.

Strong electronic interaction and multiple quantum Hall ferromagnetic phases in trilayer graphene