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In a recent publication, we demonstrated electrical spin injection anddetection in n-type silicon at temperatures up to 500K using ferromagneticmetal / SiO2 tunnel barrier contacts in a three-terminal geometry (NatureCommun. 2:245 doi:10.1038/ncomms125 (2011)). In comparing our measuredspin-voltage signal with the value predicted by theory, we followed theanalysis of Tran et al, (Phys. Rev. Lett. 102, 036601 (2009)), andinadvertently propagated an error found therein. As they note in a recenterratum (arXiv:0810.4770v2), the correct expression for the spin resistancearea product from the theory for a sample with a spin diffusion length LSD muchless than the contact width or channel thickness (our experimental situation)is given by the product {gamma}^2 {rho} LSD, where {gamma} is the tunnelingspin polarization, and {rho} is the resistivity of the semiconductor transportchannel. With this correction, our measured spin voltages are much larger thanthose predicted by theory, rather than in good agreement as we stated. Weemphasize that the basic conclusions of our paper are the same - the systematicdecrease in electron spin lifetime with increasing electron densitydemonstrates spin accumulation in the Si channel rather than in interfacestates. We further show that the measured spin lifetimes are essentiallyindependent of the tunnel barrier material (SiO2, Al2O3, MgO) or the magneticmetal used (Fe, CoFe, NiFe), demonstrating clear correlation of the measuredspin lifetime with the character of the Si, and little correlation with thetunnel barrier / interface or magnetic metal.Comment: Two files: 1) Authors' Comment and 2) Original Nature Commun articl

nature communications

Comment: "Electrical injection and detection of spin accumulation in
  silicon at 500 K with magnetic metal / silicon dioxide contacts" [Nature
  Commun. 2:245 doi:10.1038/ncomms125 (2011)]

Comment: "Electrical injection and detection of spin accumulation in silicon at 500 K with magnetic metal / silicon dioxide contacts" [Nature Commun. 2:245 doi:10.1038/ncomms125 (2011)]