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Atomically thin rhenium disulphide (ReS2) is a member of the transition metaldichalcogenide (TMDC) family of materials characterized by weak interlayercoupling and a distorted 1T structure. Here, we report on the electricaltransport study of mono- and multilayer ReS2 with polymer electrolyte gating.We find that the conductivity of monolayer ReS2 is completely suppressed athigh carrier densities, an unusual feature unique to monolayers, making ReS2the first example of such a material. While thicker flakes of ReS2 also exhibita conductivity dome and an insulator-metal-insulator sequence, they do not showa complete conductivity suppression at high doping densities. Using dual-gateddevices, we can distinguish the gate-induced doping from the electrostaticdisorder induced by the polymer electrolyte itself. Theoretical calculationsand a transport model indicate that the observed conductivity suppression canbe explained by a combination of a narrow conduction band and Andersonlocalization due to electrolyte-induced disorder.

Disorder engineering and conductivity dome in ReS2 with electrolyte gating