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Microwave detectors based on the spin-transfer torque diode effect are amongthe key emerging spintronic devices. By utilizing the spin of electrons inaddition to charge, they have the potential to overcome the theoreticalperformance limits of their semiconductor (Schottky) counterparts, which cannotoperate at low input power. Here, we demonstrate nanoscale microwave detectorsexhibiting record-high detection sensitivity of 75400 mV mW$^{-1}$ at roomtemperature, without any external bias fields, for input microwave power downto 10 nW. This sensitivity is 20x and 6x larger than state-of-the-art Schottkydiode detectors (3800 mV mW$^{-1}$) and existing spintronic diodes with >1000Oe magnetic bias (12000 mV mW$^{-1}$), respectively. Micromagnetic simulationssupported by microwave emission measurements reveal the essential role of theinjection locking to achieve this sensitivity performance. The results enabledramatic improvements in the design of low input power microwave detectors,with wide-ranging applications in telecommunications, radars, and smartnetworks.

Giant spin-torque diode sensitivity at low input power in the absence of bias magnetic field