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Photovoltaic devices based on nanotechnology have attracted much attention because of their great potential for application in electronic and energy fields. Here, a photovoltaic device based on a high-work-function metal/single-walled carbon nanotube (SWNT)/low-work-function metal hybrid junction was investigated. In the device, asymmetric metal electrodes (palladium and aluminum) were fabricated on opposite ends of a single semiconducting SWNT, which was used as the photosensitive material. This structure allowed a strong built-in electric field to be generated in the SWNT to efficiently separate photogenerated electron-hole pairs and achieve good photovoltaic effect. In the dark, the device behaved as a gate-dependent Schottky diode and exhibited the electrical characteristics of a rectifier. The SWNT diameter (band gap) was found to have a significant effect on the device characteristics. For the device fabricated with a 1.4-nm-diameter SWNT, a high rectification ratio (Iforward/Ireverse) of >103 could be achieved in the dark. Under monochromatic illumination, this device had an open-circuit voltage of 0.15 V and a high quantum efficiency of ~75%.

High-work-function metal/carbon nanotube/low-work-function metal hybrid junction photovoltaic device