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Graphene has many unique properties which make it an attractive material forfundamental study as well as for potential applications. In this paper, wereport the first experimental study of process-induced defects and stress ingraphene using Raman spectroscopy and imaging. While defects lead to theobservation of defect-related Raman bands, stress causes shift in phononfrequency. A compressive stress (as high as 2.1 GPa) was induced in graphene bydepositing a 5 nm SiO2 followed by annealing, whereas a tensile stress (~ 0.7GPa) was obtained by depositing a thin silicon capping layer. In the formercase, both the magnitude of the compressive stress and number of graphenelayers can be controlled or modified by the annealing temperature. As both thestress and thickness affect the physical properties of graphene, this study mayopen up the possibility of utilizing thickness and stress engineering toimprove the performance of graphene-based devices. Local heating techniques maybe used to either induce the stress or reduce the thickness selectively.

Tunable stress and controlled thickness modification in graphene by annealing