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Single-layer transition metal dichalcogenide (TMD) WSe2 has recentlyattracted a lot of attention because it is a 2D semiconductor with a directband-gap. Due to low doping levels it is intrinsic and shows ambipolartransport. This opens up the possibility to realize devices with the Fermilevel located in valence band, where the spin/valley coupling is strong andleads to new and interesting physics. As a consequence of its intrinsically lowdoping, large Schottky barriers form between WSe2 and metal contacts, whichimpede the injection of charges at low temperatures. Here, we report on thestudy of single-layer WSe2 transistors with a polymer electrolyte gate(PEO:LiClO4). Polymer electrolytes allow the charge carrier densities to bemodulated to very high values, allowing the observation of both the electron-and the hole-doped regimes. Moreover, our ohmic contacts formed at lowtemperatures allow us to study the temperature dependence of electron and holemobilities. At high electron densities, a re-entrant insulating regime is alsoobserved, a feature which is absent at high hole densities.

Electron and Hole Mobilities in Single-Layer WSe2