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Vertical graphene heterostructures have been introduced as an alternativearchitecture for electronic devices by using quantum tunneling. Here, wepresent that the current on/off ratio of vertical graphene field-effecttransistors is enhanced by using an armchair graphene nanoribbon as anelectrode. Moreover, we report spin-dependent tunneling current of thegraphene/MoS2 heterostructures. When an atomically thin MoS2 layer sandwichedbetween graphene electrodes becomes magnetic, Dirac fermions with differentspins feel different height of the tunnel barrier, leading to spin-dependenttunneling. Our finding will develop the present graphene heterostructures forelectronic devices by improving the device performance and by adding thepossibility of spintronics based on graphene.

Large Current Modulation and Spin-Dependent Tunneling of Vertical Graphene/MoS$_{2}$ Heterostructures