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A significant advance toward achieving practical applications of graphene asa two-dimensional material in nanoelectronics would be provided by successfulsynthesis of both n-type and p-type doped graphene. However reliable doping anda thorough understanding of carrier transport in the presence of chargedimpurities governed by ionized donors or acceptors in the graphene lattice arestill lacking. Here we report experimental realization of few-layernitrogen-doped (N-doped) graphene sheets by chemical vapor deposition oforganic molecule 1, 3, 5-triazine on Cu metal catalyst. By reducing the growthtemperature, the atomic percentage of nitrogen doping is raised from 2.1 % to5.6 %. With increasing doping concentration, N-doped graphene sheet exhibits acrossover from p-type to n-type behavior accompanied by a strong enhancement ofelectron-hole transport asymmetry, manifesting the influence of incorporatednitrogen impurities. In addition, by analyzing the data of X-ray photoelectronspectroscopy, Raman spectroscopy, and electrical measurements, we show thatpyridinic and pyrrolic N impurities play an important role in determining thetransport behavior of carriers in N-doped graphene sheets.

Nitrogen-Doped Graphene Sheets Grown by Chemical Vapor Deposition: Synthesis and Influence of Nitrogen Impurities on Carrier Transport