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We report the synthesis of AB-stacked multilayer graphene via ambientpressure chemical vapor deposition on Cu foils, and demonstrate a method toconstruct suspended multilayer graphene devices. In four-terminal geometry,such devices were characterized by hot carrier transport at temperatures downto 240 mK and in magnetic fields up to 14 T. The differential conductance(dI/dV) shows a characteristic dip at longitudinal voltage bias V=0 at lowtemperatures, indicating the presence of hot electron effect due to a weakelectron-phonon coupling. Under magnetic fields, the magnitude of the dI/dV dipdiminishes through the enhanced intra-Landau level cyclotron phonon scattering.Our results provide new perspectives in obtaining and understanding AB-stackedmultilayer graphene, important for future graphene-based applications.

AB-Stacked Multilayer Graphene Synthesized via Chemical Vapor Deposition: A Characterization by Hot Carrier Transport