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Bi2Se3 is a topological insulator with metallic surface states residing in alarge bulk bandgap. It is believed that Bi2Se3 gets additional n-type dopingafter exposure to atmosphere, thereby reducing the relative contribution ofsurface states in total conductivity. In this letter, transport measurements onBi2Se3 nanoribbons provide additional evidence of such environmental dopingprocess. Systematic surface composition analyses by X-ray photoelectronspectroscopy reveal fast formation and continuous growth of native oxide onBi2Se3 under ambient conditions. In addition to n-type doping at the surface,such surface oxidation is likely the material origin of the degradation oftopological surface states. Appropriate surface passivation or encapsulationmay be required to probe topological surface states of Bi2Se3 by transportmeasurements.

Rapid Surface Oxidation as a Source of Surface Degradation Factor for Bi2Se3