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We report a photon number resolving detector using two-dimensional electrongas (2DEG) based transistors. When the photon pulses impinge on the absorptionregion, the generated phonons dissipate ballistically in the 2DEG toward thetrench isolated nanowire transistors near the surface. The phonon-electroninteraction induces a positive conductance in the transistors, resulting in acurrent increase. With this principle, we obtain an internal quantum efficiencyfor this type of detector of up to 85%.

Highly sensitive, photon number resolving detectors mediated by phonons using $\delta$-doped GaAs transistors