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We measure charge transport in hydrogenated amorphous silicon (a-Si:H) usinga nanometer scale silicon MOSFET as a charge sensor. This charge detectiontechnique makes possible the measurement of extremely large resistances. Athigh temperatures, where the a-Si:H resistance is not too large, the chargedetection measurement agrees with a direct measurement of current. The devicegeometry allows us to probe both the field effect and dispersive transport inthe a-Si:H using charge sensing and to extract the density of states near theFermi energy.

Measuring Charge Transport in an Amorphous Semiconductor Using Charge Sensing