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Graphene is considered to be a promising candidate for futurenano-electronics due to its exceptional electronic properties. Unfortunately,the graphene field-effect-transistors (FETs) cannot be turned off effectivelydue to the absence of a bandgap, leading to an on/off current ratio typicallyaround 5 in top-gated graphene FETs. On the other hand, theoreticalinvestigations and optical measurements suggest that a bandgap up to a fewhundred meV can be created by the perpendicular E-field in bi-layer graphenes.Although previous carrier transport measurements in bi-layer graphenetransistors did indicate a gate-induced insulating state at temperature below 1Kelvin, the electrical (or transport) bandgap was estimated to be a few meV,and the room temperature on/off current ratio in bi-layer graphene FETs remainssimilar to those in single-layer graphene FETs. Here, for the first time, wereport an on/off current ratio of around 100 and 2000 at room temperature and20 K, respectively in our dual-gate bi-layer graphene FETs. We also measured anelectrical bandgap of >130 and 80 meV at average electric displacements of 2.2and 1.3 V/nm, respectively. This demonstration reveals the great potential ofbi-layer graphene in applications such as digital electronics,pseudospintronics, terahertz technology, and infrared nanophotonics.

Graphene field-effect-transistors with high on/off current ratio and large transport band gap at room temperature