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We report a direct correlation between carrier mobility and Raman topographyof epitaxial graphene (EG) grown on silicon carbide (SiC). We show the Hallmobility of material on the Si-face of SiC [SiC(0001)] is not only highlydependent on thickness uniformity but also on monolayer strain uniformity. Onlywhen both thickness and strain are uniform over a significant fraction (> 40%)of the device active area does the mobility exceed 1000 cm2/V-s. Additionally,we achieve high mobility epitaxial graphene (18,100 cm2/V-s at roomtemperature) on the C-face of SiC [SiC(000-1)] and show that carrier mobilitydepends strongly on the graphene layer stacking. These findings provide a meansto rapidly estimate carrier mobility and provide a guide to achieve very highmobility in epitaxial graphene. Our results suggest that ultra-high mobilities(>50,000 cm2/V-s) are achievable via the controlled formation of uniform,rotationally faulted epitaxial graphene.

Correlating Raman Spectral Signatures with Carrier Mobility in Epitaxial Graphene: A Guide to Achieving High Mobility on the Wafer Scale