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Driven by interactions due to the charge, spin, orbital, and lattice degreesof freedom, nanoscale inhomogeneity has emerged as a new theme for materialswith novel properties near multiphase boundaries. As vividly demonstrated incomplex metal oxides and chalcogenides, these microscopic phases are of greatscientific and technological importance for research in high-temperaturesuperconductors, colossal magnetoresistance effect, phase-change memories, anddomain switching operations. Direct imaging on dielectric properties of theselocal phases, however, presents a big challenge for existing scanning probetechniques. Here, we report the observation of electronic inhomogeneity inindium selenide (In2Se3) nanoribbons by near-field scanning microwave impedancemicroscopy. Multiple phases with local resistivity spanning six orders ofmagnitude are identified as the coexistence of superlattice, simple hexagonallattice and amorphous structures with 100nm inhomogeneous length scale,consistent with high-resolution transmission electron microscope studies. Theatomic-force-microscope-compatible microwave probe is able to performquantitative sub-surface electronic study in a noninvasive manner. Finally, thephase change memory function in In2Se3 nanoribbon devices can be locallyrecorded with big signal of opposite signs.

Nanoscale Electronic Inhomogeneity in In2Se3 Nanoribbons Revealed by Microwave Impedance Microscopy