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In this paper we describe a graphene p-n junction created by chemical doping.We find that chemical doping does not reduce mobility in contrast totop-gating. The preparation technique has been developed from systematicstudies about influences on the initial doping of freshly prepared graphene. Weinvestigated the removal of adsorbates by vacuum treatment, annealing andcompensation doping using NH3. Hysteretic behavior is observed in the electricfield effect due to dipolar adsorbates like water and NH3. Finally wedemonstrate spatially selective doping of graphene using patterned PMMA.4-terminal transport measurements of the p-n devices reveal edge channel mixingin the quantum hall regime. Quantized resistances of h/e^2, h/3e^2 and h/15e^2can be observed as expected from theory.

Four-terminal magneto-transport in graphene p-n junctions created by spatially selective doping