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We have fabricated graphene devices with a top gate separated from thegraphene layer by an air gap--a design which does not decrease the mobility ofcharge carriers under the gate. This gate is used to realise p-n-p structureswhere the conducting properties of chiral carriers are studied. The bandprofile of the structures is calculated taking into account the specifics ofthe graphene density of states and is used to find the resistance of the p-njunctions expected for chiral carriers. We show that ballistic p-n junctionshave larger resistance than diffusive ones. This is caused by suppressedtransmission of chiral carriers at angles away from the normal to the junction.

Conductance of p-n-p graphene structures with 'air-bridge' top gates