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Nanoscale and power-efficient electro-optic (EO) modulators are essentialcomponents for optical interconnects that are beginning to replace electricalwiring for intra- and inter-chip communications. Silicon-based EO modulatorsshow sufficient figures of merits regarding device footprint, speed, powerconsumption and modulation depth. However, the weak electro-optic effect ofsilicon still sets a technical bottleneck for these devices, motivating thedevelopment of modulators based on new materials. Graphene, a two-dimensionalcarbon allotrope, has emerged as an alternative active material foroptoelectronic applications owing to its exceptional optical and electronicproperties. Here, we demonstrate a high-speed graphene electro-optic modulatorbased on a graphene-boron nitride (BN) heterostructure integrated with asilicon photonic crystal nanocavity. Strongly enhanced light-matter interactionof graphene in a submicron cavity enables efficient electrical tuning of thecavity reflection. We observe a modulation depth of 3.2 dB and a cut-offfrequency of 1.2 GHz.

High-Speed Electro-Optic Modulator Integrated with Graphene-Boron Nitride Heterostructure and Photonic Crystal Nanocavity