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The emergence of semiconducting materials with inert or dangling bond-freesurfaces has created opportunities to form van der Waals heterostructureswithout the constraints of traditional epitaxial growth. For example, layeredtwo-dimensional (2D) semiconductors have been incorporated into heterostructuredevices with gate-tunable electronic and optical functionalities. However, 2Dmaterials present processing challenges that have prevented theseheterostructures from being produced with sufficient scalability and/orhomogeneity to enable their incorporation into large-area integrated circuits.Here, we extend the concept of van der Waals heterojunctions to semiconductingp-type single-walled carbon nanotube (s-SWCNT) and n-type amorphous indiumgallium zinc oxide (a-IGZO) thin films that can be solution-processed orsputtered with high spatial uniformity at the wafer scale. The resultinglarge-area, low-voltage p-n heterojunctions exhibit anti-ambipolar transfercharacteristics with high on/off ratios that are well-suited for electronic,optoelectronic, and telecommunication technologies.

Large-area, low-voltage, anti-ambipolar heterojunctions from solution-processed semiconductors