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We report on the magneto-transport properties of chemical vapor depositiongrown films of interconnected Bi2Te3 nanoplates. Similar to many othertopological insulator (TI) materials, these granular Bi2Te3 films exhibit alinear magneto-resistance (LMR) effect which has received much recentattention. Studying samples with different degree of granularity, we find auniversal correlation between the magnitude of the LMR and the average mobility(<\mu>) of the films over nearly two orders of magnitude change of <\mu>. Thegranularity controlled LMR effect here is attributed to the mobilityfluctuation induced classical LMR according to the Parish-Littlewood theory.These findings have implications to both the fundamental understanding andmagneto-resistive device applications of TI and small bandgap semiconductormaterials.

Granularity Controlled Non-Saturating Linear Magneto-resistance in Topological Insulator Bi2Te3 Films