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The p-n diodes represent the most fundamental device building block fordiverse optoelectronic functions, but are difficult to achieve in atomicallythin transition metal dichalcogenides (TMDs) due to the inability toselectively dope them into p- or n-type semiconductors. Here we report thefirst demonstration of an atomically thin and atomically sharp heterojunctionp-n diode by vertically stacking p-type monolayer tungsten diselenide (WSe2)and n-type few-layer molybdenum disulfide (MoS2). Electrical measurementdemonstrates excellent diode characteristics with well-defined currentrectification behaviour and an ideality factor of 1.2. Photocurrent mappingshows fast photoresponse over the entire overlapping region with a highestexternal quantum efficiency up to 12 %. Electroluminescence studies showprominent band edge excitonic emission and strikingly enhanced hot electronluminescence. A systematic investigation shows distinct layer-number dependentemission characteristics and reveals important insight about the origin ofhot-electron luminescence and the nature of electron-orbital interaction inTMDs. We believe that these atomically thin heterojunction p-n diodes representan interesting system for probing the fundamental electro-optical properties inTMDs, and can open up a new pathway to novel optoelectronic devices such asatomically thin photodetectors, photovoltaics, as well asspin-/valley-polarized light emitting diodes and on-chip lasers.

Electroluminescence and photocurrent generation from atomically sharp WSe2/MoS2 heterojunction p-n diodes