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Recent success in the growth of monolayer MoS$_2$ via chemical vapordeposition (CVD) has opened up prospects for the implementation of thesematerials into thin film electronic and optoelectronic devices. Here, weinvestigate the electronic transport properties of individual crystallites ofhigh quality CVD-grown monolayer MoS$_2$. The devices show low temperaturemobilities up to 500 cm$^2$V$^{-1}$s$^{-1}$ and a clear signature of metallicconduction at high doping densities. These characteristics are comparable tothe electronic properties of the best mechanically exfoliated monolayers inliterature, verifying the high electronic quality of the CVD-grown materials.We analyze the different scattering mechanisms and show, that the short-rangescattering plays a dominant role in the highly conducting regime at lowtemperatures. Additionally, the influence of phonons as a limiting factor ofthese devices is discussed.

Transport properties of monolayer MoS$_2$ grown by chemical vapour deposition