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Thermoelectric material provides a high hope for converting harmful anduseless heat into useful energy, electricity. It can also be used as solidstate Peltier coolers in integrated circuits, an outstanding challenge forelectronic engineers. The desire for a high efficient thermoelectric materialhas never been so keen. Although many works have been done, we are still farfrom having a recipe for thermoelectric materials. Nano-structuring provides aneffective way to increase figure of merit (ZT) by reducing the thermalconductivity without affecting electronic property.1 Here, we propose a novelnanoscale three-dimensional (3D) Si phononic crystal (PnC) with sphericalpores, which can reduce the thermal conductivity of bulk Si by a factor up to10,000 times at room temperature. The extreme-low thermal conductivity couldlead to a larger value of ZT than unity. The thermal conductivity changeslittle when temperature increases from room temperature to 1100 K. The phononparticipation ratio spectra show there are more phonon localizations as theporosity of PnC increases.

Extreme Low Thermal Conductivity in Nanoscale 3D Si Phononic Crystal with Spherical Pores