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Monolithic integration of III-V optoelectronic devices with materials forvarious functionalities inexpensively is always desirable. Polysilicon(poly-Si) is an ideal platform because it is dopable and semi-conducting andcan be deposited and patterned easily on a wide range of low cost substrates.However, the lack of crystalline coherency in poly-Si poses an immensechallenge for high-quality epitaxial growth. In this work, we demonstrate, forthe first time, direct growth of micron-sized InGaAs/GaAs nanopillars onpolysilicon. Transmission electron microscopy shows that the micron-sizedpillars are single-crystalline and single Wurzite-phase, far exceeding thesubstrate crystal grain size ~100nm. The high quality growth is enabled by theunique tapering geometry at the base of the nanostructure, which reduces theeffective InGaAs/Si contact area to < 40 nm in diameter. The small footprintnot only reduces stress due to lattice mismatch but also prevents thenanopillar from nucleating on multiple Si crystal grains. This relaxes thegrain size requirement for poly-Si, potentially reducing the cost for poly-Sideposition. Lasing is achieved in the as-grown pillars under optical pumping,attesting their excellent crystalline and optical quality. These promisingresults open up a pathway for low-cost synergy of optoelectronics with othertechnologies such as CMOS integrated circuits, sensing, nanofluidics, thin filmtransistor display, photovoltaics, etc.

Single Crystalline InGaAs Nanopillar Grown on Polysilicon with Dimensions beyond Substrate Grain Size Limit