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We report an electron-beam based method for the nanoscale patterning of thepoly(ethylene oxide)/LiClO$_{4}$ polymer electrolyte. We use the patternedpolymer electrolyte as a high capacitance gate dielectric in single nanowiretransistors and obtain subthreshold swings comparable to conventionalmetal/oxide wrap-gated nanowire transistors. Patterning eliminates gate/contactoverlap which reduces parasitic effects and enables multiple, independentlycontrollable gates. The method's simplicity broadens the scope for usingpolymer electrolyte gating in studies of nanowires and other nanoscale devices.

Electron-beam patterning of polymer electrolyte films to make multiple nanoscale gates for nanowire transistors