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The ferroelectric (FE) control of electronic transport is one of the emergingtechnologies in oxide heterostructures. Many previous studies in FE tunneljunctions (FTJs) exploited solely the differences in the electrostaticpotential across the FTJs that are induced by changes in the FE polarizationdirection. Here, we show that in practice the junction current ratios betweenthe two polarization states can be further enhanced by the electrostaticmodification in the correlated electron oxide electrodes, and that FTJs withnanometer thin layers can effectively produce a considerably largeelectroresistance ratio at room temperature. To understand these surprisingresults, we employed an additional control parameter, which is related to thecrossing of electronic and magnetic phase boundaries of the correlated electronoxide. The FE-induced phase modulation at the heterointerface ultimatelyresults in an enhanced electroresistance effect. Our study highlights that thestrong coupling between degrees of freedom across heterointerfaces could yieldversatile and novel applications in oxide electronics.

Tunneling Electroresistance Induced by Interfacial Phase Transitions in Ultrathin Oxide Heterostructures