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We report the influence of uniaxial tensile mechanical strain in the range0-2.2% on the phonon spectra and bandstructures of monolayer and bilayermolybdenum disulfide (MoS2) two-dimensional crystals. First, we employ Ramanspectroscopy to observe phonon softening with increased strain, breaking thedegeneracy in the E' Raman mode of MoS2, and extract a Gr\"uneisen parameter of~1.06. Second, using photoluminescence spectroscopy we measure a decrease inthe optical band gap of MoS2 that is roughly linear with strain, ~45 meV%strain for monolayer MoS2 and ~120 meV% strain for bilayer MoS2. Third, weobserve a pronounced strain-induced decrease in the photoluminescence intensityof monolayer MoS2 that is indicative of the direct-to-indirect transition ofthe character of the optical band gap of this material at applied strain of~1.5%, a value supported by first-principles calculations that includeexcitonic effects. These observations constitute the first demonstration ofstrain engineering the band structure in the emergent class of two-dimensionalcrystals, transition-metal dichalcogenides.

Bandgap Engineering of Strained Monolayer and Bilayer MoS2