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Monolayer Molybdenum Disulfide (MoS2) with a direct band gap of 1.8 eV is apromising two-dimensional material with a potential to surpass graphene in nextgeneration nanoelectronic applications. In this letter, we synthesize monolayerMoS2 on Si/SiO2 substrate via chemical vapor deposition (CVD) method andcomprehensively study the device performance based on dual-gated MoS2field-effect transistors. Over 100 devices are studied to obtain a statisticaldescription of device performance in CVD MoS2. We examine and scale down thechannel length of the transistors to 100 nm and achieve record high draincurrent of 62.5 mA/mm in CVD monolayer MoS2 film ever reported. We furtherextract the intrinsic contact resistance of low work function metal Ti onmonolayer CVD MoS2 with an expectation value of 175 {\Omega}.mm, which can besignificantly decreased to 10 {\Omega}.mm by appropriate gating. Finally,field-effect mobilities ({\mu}FE) of the carriers at various channel lengthsare obtained. By taking the impact of contact resistance into account, anaverage and maximum intrinsic {\mu}FE is estimated to be 13.0 and 21.6 cm2/Vsin monolayer CVD MoS2 films, respectively.

Statistical Study of Deep Sub-Micron Dual-Gated Field-Effect Transistors on Monolayer CVD Molybdenum Disulfide Films