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Superlattice in graphene generates extra Dirac points in the band structureand their number depends on the superlattice potential strength. Here, we havecreated a lateral superlattice in a graphene device with a tunable barrierheight using a combination of two gates. In this Letter, we demonstrate the useof lateral superlattice to modify the band structure of graphene leading to theemergence of new Dirac cones. This controlled modification of the bandstructure persists up to 100 K.

Tunable Superlattice in Graphene To Control the Number of Dirac Points