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We report on the transport properties of ABC and ABA stacked trilayergraphene using dual, locally gated field effect devices. The high efficiencyand large breakdown voltage of the HfO2 top and bottom gates enablesindependent tuning of the perpendicular electric field and the Fermi level overan unprecedentedly large range. We observe a resistance change of six orders ofmagnitude in the ABC trilayer, which demonstrates the opening of a band gap.Our data suggest that the gap saturates at a large displacement field of D ~ 3V/nm, in agreement with self-consistent Hartree calculations. In contrast, theABA trilayer remains metallic even under a large perpendicular electric field.Despite the absence of a band gap, the band structure of the ABA trilayercontinues to evolve with increasing D. We observe signatures of two-bandconduction at large D fields. Our self-consistent Hartree calculationreproduces many aspects of the experimental data, but also points to the needfor more sophisticated theory.

Transport studies of dual-gated ABC and ABA trilayer graphene: band gap opening and band structure tuning in very large perpendicular electric field