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We report the growth of single-crystalline Bi2Se3 nanoribbons with lengths upto several millimeters via a catalyst-free physical vapor deposition method.Scanning transmission electron microscopy analysis reveals that the nanoribbonsgrow along the (1120) direction. We obtain a detailed characterization of theelectronic structure of the Bi2Se3 nanoribbons from measurements ofShubnikov-de Haas (SdH) quantum oscillations. Angular dependentmagneto-transport measurements reveal a dominant two-dimensional contributionoriginating from surface states and weak contribution from the bulk states. Thecatalyst-free synthesis yields high-purity nanocrystals enabling theobservation of a large number of SdH oscillation periods and allowing for anaccurate determination of the pi-Berry phase, one of the key features of Diracfermions in topological insulators. The long-length nanoribbons can empower thepotential for fabricating multiple nanoelectronic devices on a singlenanoribbon.

Catalyst-Free Growth of Millimeter-Long Topological Insulator Bi2Se3 Nanoribbons and the Observation of pi Berry Phase