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We realize growth of self-catalyzed core-shell GaAs/GaAsP nanowires (NWs) onSi substrates using molecular-beam epitaxy. Transmission electron microscopy(TEM) of single GaAs/GaAsP NWs confirms their high crystal quality and showsdomination of the zinc-blende phase. This is further confirmed in optics ofsingle NWs, studied using cw and time-resolved photoluminescence (PL). Adetailed comparison with uncapped GaAs NWs emphasizes the effect of the GaAsPcapping in suppressing the non-radiative surface states: significant PLenhancement in the core-shell structures exceeding 2000 times at 10K isobserved; in uncapped NWs PL is quenched at 60K whereas single core-shellGaAs/GaAsP NWs exhibit bright emission even at room temperature. From analysisof the PL temperature dependence in both types of NW we are able to determinethe main carrier escape mechanisms leading to the PL quench.

Effect of the GaAsP shell on optical properties of self-catalyzed GaAs nanowires grown on silicon