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A key concept in the emerging field of spintronics is the gate voltage orelectric field control of spin precession via the effective magnetic fieldgenerated by the Rashba spin orbit interaction. Here, we demonstrate thegeneration and tuning of electric field induced Rashba spin orbit interactionin InAs nanowires where a strong electric field is created either by a doublegate or a solid electrolyte surrounding gate. In particular, the electrolytegating enables six-fold tuning of Rashba coefficient and nearly three orders ofmagnitude tuning of spin relaxation time within only 1 V of gate bias. Such adramatic tuning of spin orbit interaction in nanowires may have implications innanowire based spintronic devices.

Strong tuning of Rashba spin orbit interaction in single InAs nanowires