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We investigate the electronic properties of heterostructures based onultrathin hexagonal boron nitride (h-BN) crystalline layers sandwiched betweentwo layers of graphene as well as other conducting materials (graphite, gold).The tunnel conductance depends exponentially on the number of h-BN atomiclayers, down to a monolayer thickness. Exponential behaviour of I-Vcharacteristics for graphene/BN/graphene and graphite/BN/graphite devices isdetermined mainly by the changes in the density of states with bias voltage inthe electrodes. Conductive atomic force microscopy scans across h-BN terracesof different thickness reveal a high level of uniformity in the tunnel current.Our results demonstrate that atomically thin h-BN acts as a defect-freedielectric with a high breakdown field; it offers great potential forapplications in tunnel devices and in field-effect transistors with a highcarrier density in the conducting channel.

Atomically thin boron nitride: a tunnelling barrier for graphene devices