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The two-dimensional layer of molybdenum disulfide (MoS2) has recentlyattracted much interest due to its direct-gap property and potentialapplications in optoelectronics and energy harvesting. However, the syntheticapproach to obtain high quality and large-area MoS2 atomic thin layers is stillrare. Here we report that the high temperature annealing of a thermallydecomposed ammonium thiomolybdate layer in the presence of sulfur can producelarge-area MoS2 thin layers with superior electrical performance on insulatingsubstrates. Spectroscopic and microscopic results reveal that the synthesizedMoS2 sheets are highly crystalline. The electron mobility of the bottom-gatetransistor devices made of the synthesized MoS2 layer is comparable with thoseof the micromechanically exfoliated thin sheets from MoS2 crystals. Thissynthetic approach is simple, scalable and applicable to other transition metaldichalcogenides. Meanwhile, the obtained MoS2 films are transferable toarbitrary substrates, providing great opportunities to make layered compositesby stacking various atomically thin layers.

Growth of Large-Area and Highly Crystalline MoS2 Thin Layers on Insulating Substrates