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We developed an easy, upscalable process to prepare lateral spin-valvedevices on epitaxially grown monolayer graphene on SiC(0001) and performnonlocal spin transport measurements. We observe the longest spin relaxationtimes tau_S in monolayer graphene, while the spin diffusion coefficient D_S isstrongly reduced compared to typical results on exfoliated graphene. Theincrease of tau_S is probably related to the changed substrate, while the causefor the small value of D_S remains an open question.

Long spin relaxation times in wafer scale epitaxial graphene on SiC(0001)