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We present a Raman study of Ar(+)-bombarded graphene samples with increasingion doses. This allows us to have a controlled, increasing, amount of defects.We find that the ratio between the D and G peak intensities for a given defectdensity strongly depends on the laser excitation energy. We quantify thiseffect and present a simple equation for the determination of the point defectdensity in graphene via Raman spectroscopy for any visible excitation energy.We note that, for all excitations, the D to G intensity ratio reaches a maximumfor an inter-defect distance ~3nm. Thus, a given ratio could correspond to twodifferent defect densities, above or below the maximum. The analysis of the Gpeak width and its dispersion with excitation energy solves this ambiguity.

Quantifying defects in graphene via Raman spectroscopy at different excitation energies